Two-Stage Class-A Power Amplifier with RF Frontend for Transmitter Wireless Applications

This article introduces RF wireless integrated transmitter for 5.8GHz communication and RFID applications. The proposed wireless integrated transmitter consists of two-stage class A CMOS power amplifier (PA) with bandgap voltage reference (BGR) bias, pre-distorter, folded-cascode mixer with balun, differential cross-coupled Colpitts quadrature voltage-controlled oscillator (QVCO), band-pass Gm-C filter and antenna design. The presented PA design presents input/ output return loss of 14dB/23dB, conversion gain of 15.5dB, the output 1-dB compression point (OP 1dB) of 16.5dBm, two tone test / output 3
^rd
order intercept point (OIP3) of 25.8dBm and power added efficiency (PAE) higher than 23%, respectively. The implemented integrated transmitter using 0.18um CMOS technology with antenna has experimental at anechoic chamber.