High Gain and Low Noise MMIC Amplifier for Ku Band Applications

This paper describes the design and development of InGaAs pHEMT process based high gain, low noise monolithic self-biased amplifier for upper Ku band applications. A four stage self-biased cascaded common source inductive feedback technique has been used to achieve the specifications. This LNA features $\mathbf{3 0}\mathbf{d B}$ gain, typical noise Figure of $1.3\mathrm{~dB}$ over the frequency band and 10dBm of OP1dB. It has on chip DC blocking capacitors at RF input and output ports. It operates on $3\mathrm{~V}$ single supply with a low power consumption of $255\mathrm{~mW}$, having $3.0\mathrm{~mm} \ \mathrm{X} \ 1.5\mathrm{~mm} \ \mathrm{X} \ 0.1\mathrm{~mm}$ form factor.