A Broadband Power Amplifier MMIC to Compensate the Frequency Dependent Behaviour

We present a new approach to design a singlestage broadband power amplifier (PA) monolithic microwave integrated circuit (MMIC). The PA MMIC fabricated in $0.25\mu\mathrm{m}$ GaAs pHEMT process has an integrated Electro-Static-Discharge (ESD) limiter, which can tolerate up to $350\mathrm{~V}$ Human Body Model without failure. The conventional broadband impedance matching network (BIMN) for PAs has the very well-known limitation of opposite impedance rotation. Here, we propose a new approach to reduce the problem of frequency-dependent behavior of broadband PA. The input and output BIMNs are based on a microwave band-pass filter technique using distributed elements.