Temperature Dependent Linearity/Harmonic Analysis for FinFET and Gate All Around (GAA) Nanowire FET

Temperature dependent study on the linearity and harmonic distortion performances of FinFET are being compared with gate all around Nanowire FET (GAA NW-FET). Short channel effects (SCEs) parameters such as threshold voltage (V
th
), sub-threshold swing (SS), drain induced barrier lowering (DIBL) and switching ratio with temperature are studied. Results show that FinFET device exhibits 21.96% enlargement in I
ON
at 300K as compared to GAA NW-FET device. It is observed that GAA NW-FET device is more preferable on SCE performance and shows an improvement of SS, and DIBL with temperature variation. It is observed that FinFET and GAA NW-FET both device delivers a significant improvement of higher-order current intercept points IIP3, and 1dB compression point with lesser harmonic distortion such as HD2, HD3 at elevated temperature. However, FinFET device has shown an improvement of higher-order of transconductance (G
m
) such as G
m2
, G
m3
and higher order of voltage intercept point such as VIP2, VIP3 with low temperature.