Insulated Shallow Extension Dual Metal Junctionless Accumulation Mode MOSFET (ISE-DMJAM-MOSFET)

The present work proposes the Insulated Shallow Extension Dual Metal Junctionless Accumulation Mode MOSFET (ISE-DMJAM-MOSFET) which solves the problem of Gate Induced Drain Leakages (GIDL) current. ISE-DMJAM-MOSFET is compared with Dual Metal Junctionless Accumulation Mode MOSFET (DM-JAM-MOSFET) and Junctionless Accumulation Mode MOSFET (JAM-MOSFET). The ISE-DMJAM-MOSFET has higher I
ON
/I
OFF
with steeper subthreshold slope, higher drain current, higher output conductance, higher transconductance, higher cut off frequency(F
t
) than DM-JAM-MOSFET and JAM-MOSFET. This structure shows the reduction of 71.68% in GIDL current, 4.01% steeper subthreshold slope, 73.36% higher I
ON
/I
OFF
ratio, 6.51% higher drain current, 4% higher output conductance, 5.93% higher transconductance and 5.59% higher cut off frequency than JAM MOSFET due to presence of Dual Metal and dielectrics pockets, which minimizes the tunneling and gate leakages.