A Novel 3D Temperature Sensor Based On Buried-Gate Graphene Field Effect Transistors

In this paper, a novel temperature sensor is realized by utilizing three-dimensional (3D) buried-gate graphene field effect transistors (GFETs), where the 3D microtube structures are fabricated by applying Deng's self-rolled-up approach. Graphene is used as a temperature-sensitive material to detect the temperature variations ranging from 30 to 150 °C. Both 2D and 3D GFETs have shown positive temperature coefficients. The temperature coefficient of resistance (TCR) of 3D GFETs is up to 0.42 % °C-1, which is superior to other materials. Moreover, 3D GFETs have shown better performance in both linearity and recovery. It is believed this novel temperature sensor would provide a new way for the development of temperature sensor.