Novel Estimation Method for Dielectric Loss Quality Factor in Composite SOI/PZT Devices

We present data and analysis of low temperature (10K-300K) characterization of device (cantilever) based on lead zirconate titanate (PZT) film on SOI (silicon on insulator) platform to study the dependence of energy losses for first in-plane (IPFM) and first out-of-plane (OPFM) mode frequency. The cantilever is actuated and sensed using a differential mechanism to minimize capacitive feedthrough. The dielectric behavior of piezoelectric material affects the quality of the film (specially loss) and the transduction while integrating with substrate. Such quality can be revealed by quality factor. To estimate the quality factor associated with dielectric losses, a novel method is employed by combining measurements of temperature dependent real and imaginary part of dielectric function at the resonant frequencies, a LDV measurement using differential drive, and simulation using COMSOL.