Discrete Input Current Enhanced Boost Quasi-Z Source Inverters with Reduced Capacitor Stress

The investigation of Type-A and Type-B Discrete Input Current Enhanced-Boost quasi-Z-Source Inverters (DIC-EB-qZSI) with concentrated capacitor stress is obtainable in this article. The proposed topologies, and including EB-(q)ZSIs, provide a very large voltage boost at a low duty cycle high modulation index to provide better quality output waveform. The source and inverter bridge are also on the same ground in the proposed topologies which will reduce the leakage current problem. Compared to conventional EB(q)ZSI topologies, the Type-A circuit of the two proposed topologies has reduced capacitor stress and a low inrush current at start-up. Consequently, Type-A is taken into consideration for analysis and simulation studies. The design of Z-network network parameters, as well as comparisons through other Z-source networks, are carried out. Simulation findings are used to verify the theoretical analysis.