A Highly Efficient High Power Doherty Power Amplifier with Large Output Back-Off Range for Base Station Application

In this paper, a highly-efficient and high-power silicon integrated circuit (SiC) high electron mobility transistor (HEMT) gallium nitride (GaN) based Doherty power amplifier (DPA) design is proposed for the next generation cellular base stations. It has been observed that the proposed DPA provides an average output power of 47.5 dBm with 35% efficiency. Furthermore, it supports peak-to-average-power ratio (PAPR) of 9.5 dB with efficiency of 55% and peak power of 57 dBm. Proposed DPA also achieves adjacent channel power ratio (ACPR) of -32dBc and (error vector magnitude) EVM of 8.5% without any linearization techniques when driven by 500 KHz modulated signal.