Electro-Thermal Model for Schottky Barrier Diode Based on Self-Heating Effect

Terahertz frequency multiplier is very important for terahertz transceiver front-end to achieve terahertz high-speed wireless communication. In this paper, a study was conducted on the physical electro-thermal model of Schottky barrier diode developed on the basis of self-heating effect. The SPICE model and Symbolically Defined Devices (SDD) model of the diode with temperature-dependent saturation current and series resistance were constructed, respectively. Through Electromagnetic Heating multi-physics coupled with Heat Transfer in Solids and Electric Currents, an investigation was conducted into the temperature distribution and current distribution of the diode at dissipated powers. The SPICE model of the diode usually consisting of constant parameters was adopted to explore the I-V characteristics of the diode with temperature-dependent saturation current and series resistance at different temperatures. Given that the temperature, saturation current and series resistance of the diode have impact on each other, the diode SDD model with self-heating effect was further constructed by defining the port current related to temperature and the port voltage. The occurrence of current saturation phenomenon was demonstrated using the diode SDD model rather than the diode SPICE model, so as to validate this diode SDD model. The study of the diode physical electro-thermal model based on self-heating effect contributes a novel idea to the design of terahertz frequency multiplier and terahertz wireless communications.