Effect of Gate Oxide Material Variability on The Analog Performance of T-Gate GaN-MOS-HEMT with Graded Buffer

This paper investigates the effect of gate oxide material variability on the analog performance of the T-gate GaN-MOS-HEMT with AlGaN gradient buffer. The different oxide materials such as HfO
2
(hafnium oxide), SiO
2
(silicon oxide), and composite HfO
2
-SiO
2
are investigated. The DC and analog performance for different gate oxides have been studied by the Atlas-Silvaco simulator. The simulated study confirmed that using the HfO
2
as a gate oxide significantly reduced the leakage current, a positive shift of threshold voltage (−1.5V), the higher peak of transconductance (0.11S), transconductance generation factor (75V
⁻¹
), early voltage (V
EA
) and intrinsic gain (A
v
) is observed. These tremendous results confirm that the proposed structure is applicable for analog applications.