Light Dependency of Modified Source FDSOI based Photo-detector

This article presents electrical performance as well as light dependency of proposed modified source FDSOI based photo-detector. In this proposed device a diode is co-integrated under the buried oxide (BOX). The electrical performance dependency of proposed device on back-biasing is firstly evaluated. After investigation of electrical performance of proposed device this back biasing is utilizing to evaluate photo-sensitivity of proposed device. The photo-generated charge carriers get modulated by this back biasing and causes light induced voltage shift by means of capacitive coupling, without direct connection between diode and FDSOI transistor. The simulations are supported by TCAD simulator and suggested that a co-integration of diode with modified source FDSOI based devices are useful for efficient photo-detector.