A Numerical Study of Analog Parameter of Negative Capacitance Field Effect Transistor with Spacer

In this work, we studied the negative capacitance field effect transistor with spacer (NCFET(spacer)) for enhanced analog and digital parameters in contrast to the conventional negative capacitance field effect transistor (NCFET) employing a new idea of ferroelectric layer (HfO
2
FE). Visual TCAD simulator is applied to model NCFET(spacer). The outcomes have been examined in form of transconductance (G
m
), unity gain cutoff frequency (F
t
), intrinsic gain (A
v
), leakage current (I
off
), Early Voltage (V
ea
), transconductance generation factor (TGF), and NCFET(spacer) upgraded concert of switching ratio I
on
/I
off
by 105% over NCFET, output conductance (G
d
), improved subthreshold swing (SS) by 5.7% over NCFET, lower drain barrier induced lowering (DIBL) by 28% over NCFET. Therefore, NCFET(spacer) can be appropriate for analog and digital circuit analysis.