Current Characteristics of Double-Top-Gated Graphene Field Effect Transistor

Graphene has bipolar field effect. By adjusting the gate voltage to control the concentration of graphene electron and hole, the Fermi level changes and forms p-type and n-type semiconductors, and constitutes graphene p-n junctions. With the gradual channel approximation (GCA), a microscopic current model of double-top-gated graphene field effect transistor (DG-GFET) is established to analyze the electrical characteristics. Simulation of device demonstrates that the device has p-n junction characteristics and can be used to design injected graphene terahertz radiation source.