Real-Time Dead-Time Optimization in a GaN-Based Boost Converter Using a Digital Controller

The Gallium-Nitride (GaN) based converters can operate in a high frequency range without compromising the efficiency as compared to silicon based converters. However, the reverse conduction loss during dead-time in GaN degrades the efficiency; thus, optimization of dead-time is required to improve the efficiency. This paper proposes a real-time dead-time optimization controller for the synchronous boost converter. The proposed controller samples only the inductor current and output voltage at the rate of switching frequency to determine the optimal dead-time. Thus, this is suitable for high-frequency converters. Furthermore, the proposed controller requires only a few switching cycles to compute the optimal dead-time. A prototype of the boost converter is developed using GaN FET from GaN System and the proposed dead-time controller is implemented using a TI digital controller.