Wideband Low Noise Amplifiers for mm-Wave 5G Application using Capacitive Feedback Technique in 22nm FDSOI

This paper presents two cascode LNA with capacitive drain-to-source feedback in 22nm FDSOI process technology. The input is noise matched for low noise figure while the drain to source capacitive feedback improves the input conjugate matching without degrading the noise figure. A gain of 22dB with a 3dB bandwidth from 20–30 GHz is achieved with the first design targeted towards 5G applications. The simulated noise figure is between 2.77–3.4dB. The second LNA design adopts the same technique but is designed for a high gain. A gain of 27dB with 3dB bandwidth from 18–25 GHz is achieved. The noise figure is between 2.82–3.4dB. Both designs consume less than 39mW of power from a 1V power supply.