A 2.5D Heterogeneous Integration Demonstration for High Performance RF Application using High-Resistivity Through Si Interposer (TSI)

In this paper, a 2.5D high-resistivity through-Si-interposer (TSI) is demonstrated to integrate multi-functional dies from different device technologies (such as GaN HEMT and Si/SiGe amplifiers) for high performance RF applications. Such integration schemes allow for compact, small form-factor design in airborne radar and communication.