A Compact Wideband Reconfigurable Power Amplifier using PIN Diodes

This paper presents a compact wideband power amplifier (PA) which can be reconfigured in two different wide bands for 5G applications. To achieve the reconfiguration of operation frequencies and reduce the circuit volume, a simple switching T-shaped impedance matching network is adopted, including only one PIN diode, to realize the input matching network (IMN) and output matching network (OMN). The second harmonic control technology is adopted to improve the performance. To demonstrate the reconfigurability of two wide bands, a PA was designed and fabricated to operate at 3.2-3.6 GHz and 4.6-5.0 GHz based on GaN HEMT die device. The size of PA is 43x45 mm. Measured results show that the designed PA achieves 40.5-41.7 dBm output power and 53%-71% drain efficiency in the first band, while 39-40.4 dBm output power and 48%-56% drain efficiency in the second band.