Design of Dual-band Power Amplifier Based on Band-Stop Input Matching Structure

In this paper, a dual-band Power Amplifier (PA) with a novel dual-band input matching network (IMN) is presented. The proposed dual-band input matching structure can extend the bandwidth of the two passbands and make excellent isolation between the two passbands. In order to verify the method, a 1.8/2.6 GHz dual-band high-efficiency PA adopted a GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) is presented. Experimental results showed that the drain efficiencies (DE) are 72.3% and 70.2% with output power of 40 dBm and 40.5 dBm at 1.8 GHz and 2.6 GHz, respectively. The bandwidth has been extended to 200MHz at each passband.