An Accurate Analytical Model for Small Signal Behavior of MOSFET in Terahertz Applications

An accurate analytical model of MOSFET without any fitting parameters is proposed which can work from DC-10f
T
. The non-quasi-static (NQS) behavior is described by solving the continuity equation and drift-diffusion equation under small signal excitation, and the channel length modulation effect, the overlap capacitance and the junction capacitance are analytically modeled based on physical analysis. The proposed model is validated with the DC and small signal data of 180nm MOSFET which f
T
is 100GHz obtained by TCAD simulations and it is in great agreement with the data up to 1THz.