A New Method to Extract Mobility Degradation and Parasitic Series Resistance of Nano-scaled MOSFETs

A new method is proposed to extract the parasitic series resistance and mobility degradation for nano-scaled MOSFET, which requires only simple dc measurements. The proposed method is based on the shift-and-ratio method and takes into account the degradation of effective mobility with gate length. Compared with the traditional method, it does not require to know the threshold voltage (V
T
) and effective channel length (L
eff
), which avoids the error caused by inaccurate extraction of V
T
and L
eff
. The proposed method was carefully examined using TCAD simulation data of 90 nm MOSFET.