Simulation and test results of a slim edge planar p-on-n sensor for FEL applications

High x-ray radiation doses of the European XFEL (X-ray Free Electron Laser) facilities requires the development and use of proper silicon pixel detectors. These detectors need to meet the challenging requirements of FEL sources in terms of strong radiation tolerance, minimum dead area and high spatial resolution. Therefore, we report in this work the design and development of a planar p-on-n sensor using a structure with a slim edge technology. The device structure is investigated considering slim edge trenches with different shape and position by means of TCAD simulations with the main objective to have device performance enhancement in terms of a large breakdown voltage needed for the targeted application. Based on simulations results obtained, devices with a slim edge approach are fabricated and electrically characterized and presented in this work.