An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs

This paper presents a new desaturation protection method for silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provides an extra charging loop for the fault detection part of desaturation protection circuit by utilizing the difference of drain-source voltage between fault and normal conditions. It can effectively reduce the overall response time, and the acceleration is partly self-adaptive according to the operating voltage, without compromising its noise immunity. The performance of the proposed circuit has been validated both by simulation and experimental results. The experimental results show that the blanking-time can be reduced by about 50% with the proposed method.