Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition

This paper provides the extra loss caused by dynamic ON-Resistance in a soft-switching converter seeking to incorporate it into the design process, studying its dependence on temperature and switching frequency. Firstly, characterization is conducted in double-pulse tests to verify some impact factors which may vary in converter operation. Different operation modes, hard-switching, soft-switching, and reverse conduction at various temperatures, can be achieved using the full-bridge schematics with an extra resistor. Secondly, a series resonant converter is built based on the same testbed and at least a 10 % conduction loss increase under soft-switching operation is observed.