A Design of Ultra Low Noise Amplifier through Output Sharing Multi-Input structure using 65nm SOI process technology

This paper describes Design Low Noise Amplifier. This structure satisfies the High Band (1.8G to 2.7GHz) band of LTE RF communication by switching three External Input Inductors. Furthermore, the LNA presented implements proposes Ultra Low Noise techniques via Multi-Input structures. The designed LNA has the highest Gain: 18 dB and the lowest NF: 0.7 dB on 65nm SOI process technology.