Developing Ultralow Trun-on Voltage Diode by Steep Slope "PN-Body Tied SOI-FET"

We have developed the diode with steep turn-on characteristics and the ultralow turn-on voltage, using our newly proposed steep slope device, "PN-Body Tied SOI-FET(PNBT)." In this work, we give our first report on issues we have encountered when achieving the ultralow turn-on PNBT-diode. The issues were systematically clarified by comparing the measured data with the normal turn-on and the ultralow turn-on PNBT-diode. Additionally, directions for improvement were suggested.