Relation of PID well to gate antenna charging effects

PID antenna gate and well charging effects can lead to critical damage to FETs in semiconductor products leading to early fails in the field. In this paper we discuss the relation of the gate to home and remote well charging mechanisms for identical single-layer antennas and gate oxide for an advanced BCD technology using triple well isolation. Home and remote well charging damage from M7 processing is detected and its effect in form of a reduced HCI lifetime shown. Protection options for the different mechanisms are tested and discussed.