Studies of AC BTI Stress in 4H SiC MOSFETs

We have performed bipolar AC stress on commercially available 4H polytype silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). We observed threshold voltage and subthreshold swing (SS) instabilities that are dependent on stress signal frequency and amplitudes. The dependencies are explained in terms of carrier emission/capture in stress induced interfacial traps.