Effects of using Multi Voltage Threshold Transistors in Asynchronous Circuits

Integrated Latch (IL) based Quasi-Delay-Insensitive (QDI) asynchronous circuits provides power and performance efficiency for large scale systems but increases leakage power with shrinking size in deep-submicron. This paper investigates the use of Multi-Voltage Threshold transistors in Sense Amplifier Half-Buffer based asynchronous circuits by using Logical Effort and Multi-Voltage Threshold transistors to switch critical path faster and reduce power consumption on noncritical path. The simulation results of custom designed buffer asynchronous cells with MVT using 40nm technology performs 8% faster and consume 23% less power when compared with same cell designed without MVT transistors.