Silicon Defect Observation From Ultra-Thick Sample Using TEM EELS Technique

In this paper, we have applied an uncommon transmission electron microscopy (TEM) technique to observe silicon defects from an ultra-thick (> 3um) bulk specimen. This method combines TEM with the electron-energy loss spectroscopy (EELS) technique. Using this technique, we were able to observe the presence of large size silicon defects that formed deep across the wafer. Compared with the conventional TEM method, this technique provides a more complete profile of the silicon defect and is useful in identifying the root cause of the defect formation. In addition, the success rate of capturing the defect is higher due to much larger specimen thickness is used.