3D NAND Memory Auto-delayering with Generic Delayering Model Using PFIB

A Plasma focused ion beam (PFIB) based auto-delayering technique with generic delayering model for 3D NAND memory manufacturer is demonstrated in this paper. The characteristics of PFIB based 3D NAND delayering is properly estimated and predicted by the simulation adopting the proposed model which extracts the electrical performance of 3D NAND array from its physical structure. The variation of electrical performance of 3D NAND could be monitored synchronously during whole delayering procedure from the top layer toward to the end layer achieving auto-delayering. The testing results show that the proposed model and technique could lead to successful auto-delayering with accurate endpointing, correct stopped tier/layer and uniform surface