Finding Invisible Cracks via Nano-Probing

Nano-probing is a failure analysis technique widely discussed in recent years. As semiconductor features continually shrink, conventional emission tools become increasingly challenged in localizing the failure site to a single transistor level. Therefore, nano-probing becomes essential in further isolating the failing transistor in order to reveal the physical defect. In this paper, we will show a case study of utilizing a nano-probing tool to isolate the exact failing location where an embedded crack causes a circuity failure. We also analyze the crack with Focused-Ion-Beam (FIB) cross-section and Scanning Transmission Electron Microscopy (STEM) elemental mapping to obtain more detailed information about the defect.