Guidelines of Plasma-FIB Delayering Techniques for Advanced Process Node

A precise and reliable technique using plasma focus ion beam (PFIB) to conduct IC chip delayering on sub-16nm technology is proposed. Through a series of DOE (design of experiment), we successfully improve the uniformity by modifying the gas concentration. In addition, geometric effect of MultiChem, and end point monitor system are also discussed to achieve a uniform and accurate delayering result.