Charge–Sensing method for Nickel contamination detection on a 4H-SiC PowerMOSFET

Process induced contamination became a key point in the recent years to focus the yield improvement on 4H-SiC PowerMOSFET in the production lines. It has been demonstrated that metallic contamination could compromising irreparably transistor performances and reliability. Moreover, the threshold instability is addressed to SiC/SiO2 interface or gate oxide issues. In this work a new method based on charge-sensing to detect intermediate dielectric contamination effect is shown..The confirmation of the hypothesized model has been confirmed by controlled contamination on TEOS layer.