Carrier Recombination Processes in 2.3-µm Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)

Epitaxial growth of III-V lasers on CMOS-compatible Si(001) is a key component in the realisation of photonic integrated circuits. In this work we investigate the mechanisms underpinning the performance of first generation GaSb-based devices grown epitaxially on industry-standard Si.