Type-II GaAs1-xBix/GaNyAs1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers

We discuss a new class of type-II quantum wells (QWs) that exploit the impact of Bi and N on the GaAs band-structure. Via growth, experiment, and theoretical calculations we highlight the properties of GaAs
1
xBi
x
/GaN
y
As
1-y
"W" QWs, demonstrating a potential pathway to uncooled telecom-wavelength laser operation.