High-power pulsed (100 ns) laser sources (900 nm) based on epitaxially integrated heterostructures with tunnel p-n junctions

Two approaches for making laser sources are investigated. Devices based on a structure with 3 uncoupled laser parts demonstrate a peak power of 460W@250A (800µm aperture). We also consider heterostructures operating at the same higher-order vertical mode with a potentially high radiative and injection efficiency.