Reduction in Leakage Current of 20 nm Gate Length SiGe On-Insulator PMOSFET by Altering Source/Drain Potential Using Tubs Under Source/Drain Regions

This paper proposes a technique to reduce the OFF-state leakage current of SiGe On-Insulator PMOSFET by three orders of magnitude with marginal reduction in ON current by introducing doped tubs under the source/drain regions. The wells in the valence band are introduced by doped tubs under the source/drain regions which increase the depth of the valence band energy. The simulation results show that the device has a high ION to IOFF current ratio
$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}$
~ 6.25x 10
⁶
and Subthreshold Swing SS ~ 85 m V /decade.