A Gain Boosted Single-Ended 300 GHz InP HBT Oscillator for Terahertz Applications

This work presents a novel single-ended, gain boosted 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) based oscillator in the terahertz frequency range. An embedding network is added with common emitter HBT to boost the feedback gain from Gma (Maximum Available Gain) to Gmax (Maximum Achievable Gain). The achieved output power is 5 dBm at 304.5 GHz and it consumes only 114 mW. The phase noise is -82 dBc/Hz at 1 MHz offset frequency. The proposed oscillator can be used for submillimeter-wave and next-generation integrated circuit applications like THz imaging and sensing.