Total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array VLSI during operation

This paper presents the total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array (FPGA) during operation. The optoelectronic FPGA was fabricated using 0.18
${\mu m}$
standard complementary metal oxide semiconductor (CMOS) process technology. An experiment assessing the total-ionizing-dose tolerance of the optoelectronic FPGA was conducted at a 2.27–2.28 kGy/h dose rate using a
⁶⁰
Co gamma radiation source. Results clarified that the optoelectronic FPGA can function correctly under a 2.27–2.28 kGy/h dose rate and that the total-ionizing-dose tolerance of the optoelectronic FPGA is greater than 80 Mrad during operation. The total-ionizing-dose tolerance result is 80 times higher than that of typical radiation-hardened very large scale integrated circuits (VLSIs) and typical radiation-hardened FPGAs.