Advanced Gunn Diode on Based Graded GaPAs - GaInAs as High Power Source of Millimeter Wave

The power spectrums of oscillations of 1 µm-length Gunn diodes based on graded-gap GaInPAs alloy are assessed by means of hydrodynamic simulations calibrated against Monte Carlo simulation data. A smooth graded-gap GaInPAs semiconductor is used to stimulate the generation of drifting electrical domains. In the paper is presented the results of the investigation of oscillations in the diode based on graded-gap GaPAs - GaInAs alloy at different graded-gap layer length, different mole fraction of In and P in semiconductor and different electron density in transit zone. Three optimal lengths of a graded-gap semiconductor and the corresponding optimal mole fractions of In and P for maximum RF power are found. One of the optimized diodes provides 11.28 mW RF power at 102.5 GHz for the fundamental and 49 µW (307.5 GHz) for the third harmonic at P fraction is 0.33 and In fraction is 0.50. Different diodes are compared.