Memory properties of GeZrO2 based trilayer structure

The memory properties of a trilayer structure of ZrO
2
/Ge-ZrO
2
/ZrO
2
/Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition followed by a rapid thermal annealing process for obtaining Ge nanocrystals embedded in ZrO
2
matrix. The X-ray diffraction patterns obtained on annealed structures show that both trilayer structures are cristallized, with narrow diffraction peaks. Ge as a separated phase is not evidenced in the diffractograms, instead is possible that Ge atoms enters in ZrO
2
lattice structure and form a compound of ZrO
3
GeO
8
crystallized in the tetragonal phase. In the case of ZrO
2
control structure, the diffractograms show that the ZrO
2
layer is crystallized in tetragonal phase. The memory properties are evidenced by C-V characteristics with counterclockwise hysteresis loop and a memory window of ΔV= 1.1V for the structure annealed at 570 °C and ΔV= 0.8 V for the structure annealed at 650 °C. The influence of the interface SiO
2
layer on the frequency dependence of capacitance was evidenced by C-f characteristics.