A Modeling Method for Behavior Model of Aging IGBT

The numerous advantages of Insulated Gate Bipolar Transistor (IGBT) power modules and the development for higher voltage and current ratings make them attractive for traction applications. High reliability is required but aging is a common problem. In this paper, the IGBT behavior model under normal conditions is established by using broken line fitting and function description, and the behavior model of aging IGBT was established by combining the aging characteristics and adding aging coefficient. Finally, the model was applied to traction converter. The simulation results show that the model can not only reflect the aging degree and describe the transient behavior of IGBT completely, but also can obtain aging data without aging experiment and reduce the cost of aging research. The simulation results show the effectiveness of the model.