PtSe2 Nanosheets as Efficient Field Emitter

We have grown PtSe
2
nanosheets on Si substrate using chemical route followed by thermal annealing in inert atmosphere. The structural and morphological investigations were carried out with the help of Raman spectroscopy and Transmission Electron Microscopy (TEM). The field emission (FE) studies have been reported for the PtSe2 nanosheets in planar diode configuration under ultrahigh vacuum conditions. The turn on field was found to be 5.4 V/μm and FE current density of 505 μA/cm
²
was drawn at an applied electric field of 10.8 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 5 μA over a period of more than 5 h exhibits an initial increase and subsequent stabilization of the current.