Vertical Si Nano Vacuum Channel Transistors: Building Blocks for Empty State Electronics

Vacuum nano channel transistors (VNCT) could potentially have superior performance compared to solid state devices of equivalent channel length owing to ballistic transport of electrons, shorter transit time and higher intrinsic breakdown voltage. Furthermore, they are expected to have very high breakdown voltage. Hence, NVCT have promise for very high Johnson Figure of Merit that is as high as 10
¹⁴
V/s.