Fabrication of Ga2O3/Si direct bonding interface for high power device applications

The fabrication of Ga
2
O
3
(010)/Si(100) and Ga
2
O
3
(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga
2
O
3
and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).