Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation

We successfully fabricate a Ga
2
O
3
/3C-SiC direct bonding by the surface-activated bonding (SAB) of 3C-SiC epitaxial layer grown on Si substrate to Ga
2
O
3
substrate. The structure of bonding interface will be investigated by transmission electron microscope (TEM).