Direct bonding of GaN and Si substrates using wet cleaning processes

Gallium nitride (GaN) substrate was directly bonded with silicon substrate using a sequential wet treatment consisting of H
2
SO
4
/H
2
O
2
and NH
3
/H
2
O
2
mixtures under atmospheric conditions. The bonding strength of the bonded substrates annealed at 300 °C reached up to 6.98 MPa. This study contributes to the development for GaN-based integrated devices.