I. Introduction
MV high power converters are conventionally built using silicon (Si)- based insulated-gate bipolar transistors (IGBTs) [1], [2]. These silicon-based devices limit the switching frequency to less than 1 kHz due to their slow switching speeds. With the recent advancement of wide bandgap semiconductors, power devices such as SiC MOSFETs with blocking voltages up to 15 kV are now available to realize the MV power converters [3]. SiC-based devices can operate at higher switching frequencies ( kHz) with hard-switching PWM, without considerable switching losses. A high switching frequency helps reduces the size of magnetic components, hence improving the power density of the MV converters. The advantages of these medium voltage SiC power semiconductor devices have opened up different areas of applications, including high-speed MV motor drives, medium voltage high power EV battery charging [4], [5] and solid-state transformers interfaced to medium voltage AC grids [6]–[9].