Efficient Optical Coupling between III-V Semiconductor and SiNx Waveguides via Heteroepitaxial Integration

We demonstrate the first reported integration of III-V waveguides (GaAs/Al0.4Ga0.6As) with SiN
x
waveguides via heteroepitaxial III-V-on-silicon growth. We achieve efficient optical coupling (-2.5 dB loss/transition) at 1550 nm and low threading dislocation density
$(4\times 10^{6}\text{cm}^{-2})$
, suitable for fabrication of high-performance optoelectronic devices. © 2021 Massachusetts Institute of Technology